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      NXP Semiconductors 1PS79SB10 Schottky barrier single diode 1PS79SB10 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 14 August 2012 4 / 8 0 0 10 20 30 5 10 15 VR (V) Cd (pF) msa891 f = 1 MHz; Tamb = 25 °C Fig. 3. Diode capacitance as a function of reverse voltage; typical values 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 02-12-13 Dimensions in mm 1.65 1.25 1.55 1.15 0.17 0.11 0.34 0.26 0.65 0.58 0.85 0.75 1 2 Fig. 4. SOD523 |